The TRIFT-V nanoTOF-II (Triple Focusing Time of Flight) is a surface sensitive analysis technology that can provides compositions and images of surface molecules, elements and their isotopes with a top few atomic layers. All element and isotopes, including Hydrogen can be analyzed by TOF-SIMS. All the secondary ion species leaving the sample surface after bombarding by pulsed primary ion beam are analyzed TOF-SIMS to achieve those functions.


TRIFT-V nanoTOF-II is the secondary generation SIMS instrument, the instrument has a unique and patented time-of-flight (TOF) analyzer which has the maximum angular and energy acceptance of all commercially available TOF-SIMS instruments, which achieves high spatial resolution and mass resolution by using triple focus hemispherical electrostatic analyzer which has excellent ion transmitting. TRIFT-V nanoTOF-II also has high ability that can image samples with very complex geometries without shadowing.


TRIFT-V nanoTOF-II and Principle of TOF-SIMS



Large solid angle of collection and depth-of-field

the secondary ions are released in different initial energies and angles from the sample surface. Thus, even if the ions with the same mass, the time of flight will make a difference in the analyzer. The difference in time of flight is one of the reasons which causing the mass resolution worse. But the difference caused by the different initial energies and angles can be corrected at the same time. As the TRIFT-V nanoTOF-II is equipped with the triple focus hemispherical electrostatic analyzer. The most significant feature of TRIFT-V nanoTOF-II is that it can achieve the high mass resolution and high sensitivity at the same time. And it can also image the samples without shadowing.


(A) the orbit of secondary ions in different angles

(B) image of insulating ceramic fracture and its secondary ion distribution


Achieving high spatial resolution and high mass resolution mode simultaneously

TRIFT-V nanoTOF-II is equipped with new developed ion gun(the ion source are Bi, Au and Ga), the ultimate spatial resolution is about 70nm(corresponding to Bi3++ ). In addition, with  the new designed pulse compression mechanism(bunched), if the spatial resolution is less than 500nm(corresponding to Bi3++), we can see the current density increase more than three times in the high mass resolution mode, While also improving the sensitivity, spatial resolution and mass resolution.


(A) new type of Ion gon, (B) image from old type instrument, (C) image from TRIFT-V nanoTOF-II.


Less than FOV 5 μm is available

The figure below shows observation results of a polymer blends of PS/PMMA obtained in high spatial resolution mode. The structure of polymer blends as a molecular distribution can be revealed by nanoTOF II, which was traditionally observed by AFM.



Low background and metastable rejection

The TRIFT-V nanoTOF-II inherits the advantages of the previous generation. And it is equipped with the energy slit to achieve the metastable rejection which is used to reduce the background noise of mass spectrum. Compared with the mass spectrum acquired on reflectron- and TRIFT-based instruments, it is clear that the background noise of mass spectrum acquired on reflectron-based instrument is larger than that acquired on TRIFT-based instrument. As the reflectron-based instrument do not have the function of metastable rejection. 


(A)Reflectron-based mass spectrum of PTFE in the range of 130-140 m/z with the major metastable daughter peaks identified. (B)TRIFT-based mass spectrum of PTFE in the range of 130-140 m/z; the secondary ion signals are not obstructed by metastable interferences.


High precision depth profiling

The TRIFT-V nanoTOF-II has several optional ion guns for depth profiling. Cs ion gun (suitable for negative ions analysis) and oxygen ion gun (suitable for positive ions analysis) are both suitable for high-sensitivity analysis of inorganic compounds. C60 ion gun and Ar-GCIB are both used in depth profiling of organic thin films. Those two ion guns can achieve high-sensitivity depth profiling under the circumstance of high depth resolution.


Image of new Cs Ion Gun


The result of depth profiling of Si/Ge multilayer film


Image of Ar-GCIB


The result of depth profiling of Irganox multilayer film


Application of Various Ion Gun


FIB-TOF for 3D materials characterization

The intrinsic characteristics of the TRIFT analyzer were demonstrated by imaging the vertically-oriented wall of a FIB-milled crater without e.g. tilting the sample.  Thus, full 3D characterization of materials is possible with successive FIB milling and TOF-SIMS acquisition cycles, and 3D image reconstruction is straightforward because the sample is not moved between FIB milling and TOF-SIMS data acquisition.


(Left) 3D iso-surface overlay image of a CuW alloy with the Cu iso-surface (green) and the W iso-surface (blue) displayed (Right) 3D iso-surface overlay image of the Cu iso-surface (green) and the W iso-surface (blue).


Easy operation of software(SmartSoftTM-TOF) cooperating with Wincadence

nanoTOF II operating software is designed as “Flow” concept. User can load the samples, locate the samples, set the analysis conditions and acquire spectrum In accordance with the flow sequence. The software displays all the parts, the current operating condition and real-time parameters of the instrument with visual graphical interface. It makes easy for customer to learn and to use the software.


Interface of SmartSoftTM-TOF


Interface of Wincadence


A variety of sample handling

Sample platen: 100 mm square sample platen is as standard. Two type of standard platens which are a front mount and back mount platen can be chosen depending on application


Sample platen


Sample cooling/heating platen: Sample cooling/heating can work even in operation, not only during sample sample mounting at the sample introduction, but also during moving stage


Heating/cooling Sample platen


Transfer vessel: Transfer vessel, for instance, can work between the customer’s glove box and the nanoTOF II introduction chamber without being exposed into air. Air sensitive samples such as lithium battery or fuel cell are most appropriate.


Transfer Vessel


Specifications of TRIFT-V nanoTOF-II(Bi as the primary ion source)

  • Mass resolution(m/Δm) of inorganic materials: Si(28Si+and28SiH+) over 12000;
  • Mass resolution(m/Δm) of organic materials: PET(104 amu) over 12000;
  • The minimum beam diameter: 70nm(Spatial resolution priority mode); 0.5μm (Mass resolution priority mode).


Options of TRIFT-V nanoTOF-II

Ar-GCIB, C60 ion gun, Cs ion gun, Argon/Oxygen ion gun, Hot/Cold stage, Heating sample system, Transfer Vessel, Oxygen leakage system, Zalar rotation system, Focused Ion Beam, prep-intro chamber, Various special brackets, Off-line data processing system, Static SIMS Library and so on.



  • Paints and OLED material: characterizing paints layers and defects within the layers, characterize high mass fragments.
  • Thin film and coatings: profiling organic coating, imaging distribution of both organic and inorganic coatings.
  • Inorganic and Semiconductor device: residue left on wafer process, Defect analysis, etching/clean residue analysis, metal trace contaminants left on wafer process; 3D imaging characterization of doping elements.
  • Magnetic storage: residue left on surface of media, contamination comes from the process, including both organic and inorganic. Failure analysis; lubricates analysis.
  • Drugs with Controlled Drug-Release Coatings: imaging drug cross section, new drug-releasing coating characterization and development.
  • Tissue Cross-Section Analyses: research tissue and cells. 



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For more details, please visit our Brochure or Application Notes pages.

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