Dynamic SIMS (Secondary Ion Mass Spectrometry) is a surface analysis technique which uses a primary ion beam (usually Cesium source) to hit onto a sample surface inside a UHV chamber, hence generating the secondary ions. These secondary ions would then pass through a quadrupole mass analyzer for analyzing based on mass-to-charge ratio (m/q) then in a result knowing what elements is/are present on the sample along the Z (depth) axis. Dynamic SIMS is a very powerful technique and irreplaceable tool for analyzing semiconductor doping or ions implantation research.




ULVAC-PHI newest Dynamic SIMS ADEPT1010 with quadrupole mass analyzer is designed based on the previous very successful PHI6300 and PHI 6600 D-SIMS instruments. With the enhancement re-design of the ion source optics design, the ion source can operate at as low as 250eV of beam energy while still maintaining high enough target current for carrying out D-SIMS analysis. And finally getting the ultimate depth resolution result.



  1. Very high probe current even at low beam energy, had make superior depth resolution possible.
  2. Redesign of the ion path optics system had dramatically improve the secondary ion transmission. This raises the D-SIMS analysis throughput by a large factor as well as the detection limit too.
  3. An automated 5-axis sample stage.
  4. The quadrupole mass analyzer has a large acceptance angle allowing to detect all direction secondary ions.



As below figure shown, by using a primary Cs ion source with 5kV beam energy and probe current of 100nA, an analysis is carry out on a GaAs sample with implantation of H, C and O elements. From the result, one can see the detection limit of Hydrogen is at 7.1X1016 atm/cm3, Oxygen detection limit is at 4.4X1015 atm/cm3, and Carbon detection limit is 2.0X1015 atm/cm3.



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