PHI ADEPT 1010
Introduction
Dynamic SIMS (Secondary Ion Mass Spectrometry) is a surface analysis technique which uses a primary ion beam (usually Cesium source) to hit onto a sample surface inside a UHV chamber, hence generating the secondary ions. These secondary ions would then pass through a quadrupole mass analyzer for analyzing based on mass-to-charge ratio (m/q) then in a result knowing what elements is/are present on the sample along the Z (depth) axis. Dynamic SIMS is a very powerful technique and irreplaceable tool for analyzing semiconductor doping or ions implantation research.
Benefits
ULVAC-PHI newest Dynamic SIMS ADEPT1010 with quadrupole mass analyzer is designed based on the previous very successful PHI6300 and PHI 6600 D-SIMS instruments. With the enhancement re-design of the ion source optics design, the ion source can operate at as low as 250eV of beam energy while still maintaining high enough target current for carrying out D-SIMS analysis. And finally getting the ultimate depth resolution result.
Features
- Very high probe current even at low beam energy, had make superior depth resolution possible.
- Redesign of the ion path optics system had dramatically improve the secondary ion transmission. This raises the D-SIMS analysis throughput by a large factor as well as the detection limit too.
- An automated 5-axis sample stage.
- The quadrupole mass analyzer has a large acceptance angle allowing to detect all direction secondary ions.
Applications
As below figure shown, by using a primary Cs ion source with 5kV beam energy and probe current of 100nA, an analysis is carry out on a GaAs sample with implantation of H, C and O elements. From the result, one can see the detection limit of Hydrogen is at 7.1X1016 atm/cm3, Oxygen detection limit is at 4.4X1015 atm/cm3, and Carbon detection limit is 2.0X1015 atm/cm3.
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