PHI Genesis Introduction




PHI Genesis (Model 500 for XPS / Model 900 for HAXPES) is the most recent generation of PHI’s fully-automated multi-tech XPS / HAXPES product line. It includes easy operation & multi-technique options, which are important for studying today’s advanced materials.

PHI Genesis is fully automated with sample parking, and features a newly designed analyzer that provides high-performance large & micro-area XPS analysis. Genesis offers a comprehensive solution for batteries, semiconductors, organic devices and other applications resolution with high-speed & non-destructive depth profiling, combined with Hard X-ray Cr Kα source for HAXPES.


Key Technology

  • Ease of Operation
  • Multi-Technique Options
  • High Throughput Large Area Analysis
  • Superior Micro Area Spectroscopy ≤ 5 μm X-ray spot
  • High Throughput Depth Profiling
  • Non-Destructive Depth Profiling


Ease of Operation

PHI GENESIS provides a new user interface experience that enables intuitive, easy and fully automated operation of the high-performance instrument. This interface allows access to all necessary functions to setup routine and advanced multi-technique acquisitions within a single screen, while retaining functions such as navigation using intro photo and 100% accurate positioning from X-ray induced secondary electron images (SXI).


Intuitive UI

PHI GENESIS provides a simple, intuitive and ease of use user interface. This allows users to perform simple operations as well as automated analyses including all options.


Multi-Technique Options

Same area automated analysis using multiple techniques covering full range of energy - from conduction band with LEIPS to core-level excitation with HAXPES, PHI GENESIS offers unprecedented value not found in conventional XPS instruments.

No compromise solution:

The high-performance XPS, HAXPES, UPS, LEIPS, REELS, AES, and a variety of other options meet all surface analysis needs.



High Throughput Large Area Analysis

  • Put your holder with samples in intro and it will be automatically moved to analysis chamber
  • Three sample holders can be used at the same time
  • 80 x80 mm large sample holder is available for high throughput
  • Can analyze a variety of sample types – powders, rough textures, insulators, large or oddly shaped samples.


[Standard holder 40 mm x 40 mm]


[Extended plate 80 mm x 80 mm]

[Dedicated tilt holder]


Fully autometed multi-sample transfer platform


Superior Micro Area Spectroscopy ≤ 5 μm X-ray spot

In PHI GENESIS, micro-focused scanning X-ray source is used for intuitive SEMlike navigation using X-ray-induced secondary electron images (SXIs). Multipoint small areas can be defined from SXI images with 100% certainty for spectra, depth profiles and maps.



5 μm SXI


10 μm SXI


Improved Scanning X-ray Image(SXI)
The unsurpassed 5 μm small spot X-ray beam opens new opportunities for micro-XPS applications.


High Throughput Depth Profiling

PHI GENESIS enables high throughput depth profiling. Micro-focused X-ray source, highly sensitive detector, high-performance Argon ion gun, and high-efficiency dual beam neutralization enable fully automated depth profiling, including multi-point analysis within a single crater.


High performance depth profiling

(Left) A depth profile of a thin film All-solid-state battery. Depth profiling to a depth below 2.0 μm clearly shows the existence of the Li-rich interface.
(Right) At the initial stage of LiPON film deposition, it was suggested that oxygen was incorporated from LiCoO2 layer to LiPON layer, to stimulate Co reduction from oxide to metal at the Li-rich interface of LoCoO2 layer.




Non Destructive Depth Profiling

Using high-energy hard X-ray source, it is possible to obtain information from a deeper depth compared to conventional soft X-ray XPS. This enables a detailed and unperturbed chemical state analysis of buried interfaces without sputtering.


No-sputter depth probing

Quantum Dots(QDs) with a diameter of approximately 10 to 50 nm are used in next-generation transparent luminescent materials. By combining information from the same area analysis using XPS (Al K α X-rays) and HAXPES (Cr K α X-rays), it is possible to perform detailed depth-resolved structure analysis of QDs. The combination of XPS and HAXPES allows depth-resolved, quantitative and chemical analysis of nanoparticles, eliminating possible ion beam-induced damage.



List of Application Area

Advanced functional materials used in all-solid-state batteries, semiconductors, photovoltaics, catalysts, etc. are complex multi-component materials, and their research and development relies on high throughput quantitative chemical structure-to-property optimization. ULVAC-PHI offers new surface analysis instrument that offers unsurpassed high performance and high degree of flexibility and automation to meet the requirements of all customers - the “PHI GENESIS” scanning X-ray photoelectron spectrometer (XPS).


The Application Areas include:
- semiconductors, batteries, organic devices, catalysts, quantum dots, nanoparticles, bio- and life science materials, polymers, ceramics, metals, and others solid materials and devices.


Wide Variety of the PHI GENESIS Options of Research Needs

Battery  (AES + Transfer Vessel)

“pA-AES Lithium chemical map from LiPON/LiCoO2 cross-section” Li-based materials, such as LiPON, are sensitive to electron beam irradiation. High-sensitivity analyzer available at PHI GENESIS enables fast acquisition of AES chemical maps at low beam current (300 pA).


Semiconductors (HAXPES)

Semiconductor devices generally consist of complex thin films containing many elements, and their development often requires non-destructive analysis of chemical states at interfaces. HAXPES is necessary to acquire information from buried interfaces such as GaN under gate oxide film.


Organic Devices (UPS / LEIPS + GCIB)

The change of energy band diagram using UPS/ LEIPS and Ar-GCIB
(1) C60 film surface
(2) C 60 film after surface cleaning.
(3) C60 film /Au interface
(4) Au surface
Energy diagram of organic layers as a function of depth can be determined by the combination of UPS / LEIPS and Ar-GCIB depth profiling.


Micro Electronics (HAXPES)

Micro-spot solder-ball analysis

The HAXPES data shows a higher percentage of metallic Sn than the XPS data. This is consistent with the formation of surface oxides on the solder ball.


Optional Accessories

  • UPS
  • SAM
  • Dual anode X-ray sources (Mg/Mg, Mg/Al, Mg/Zr)
  • Dual source ion gun for Ar Monomer/Ar-GCIB
  • Ar-GCIB cluster size measurement tool
  • 20 kV C60 cluster ion gun
  • Narrow acceptance angle aperture
  • Sample heating and cooling
  • 4-contact voltage application
  • Transfer vessel
  • Dedicated intro pumping
  • High magnification sample observation microscope (Live view)
  • Sample positioning system (SPS)



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For more details, please visit our Brochure or Application Notes pages.

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